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Publication date: October 2007 SKL00030AED

PIN diodes

This product complies with the RoHS Directive (EU 2002/95/EC).
MA2SP050G

Silicon epitaxial planar type

For high frequency attenuator
■Features
•High performance forward current IF controlled forward dy-
namic resistance rf
•Small terminal capacitance Ct
•Miniature package and surface mounting type
■Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage VR60 V
Forward current IF50 mA
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage VFIF = 10 mA 1.0 V
Reverse current IRVR = 60 V 100 nA
Terminal capacitance CtVR = 0 V, f = 1 MHz 2.4 pF
Forward dynamic resistance rfIF = 10 mA, f = 100 MHz 5.5 Ω
■Electrical Characteristics Ta = 25°C ± 3°C
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
■Package
•Code
SSMini2-F4
•Pin Name
1: Anode
2: Cathode
■Marking Symbol: 6P