1

PIN Diodes

Publication date: September 2003 SKL00017AEDMA2SP06

Silicon planar type

For high frequency switch
■Features
•Low terminal capacitance: Ct ≤ 0.6 pF
•Low forward dynamic resistance: rf ≤ 1.2 Ω
■Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating UnitReverse voltage VR60 VForward current IF100 mAJunction temperature Tj150 °CStorage temperature Tstg −55 to +150 °CParameter Symbol Conditions Min Typ Max UnitForward voltage VFIF = 10 mA 0.85 1.0 VReverse current IRVR = 60 V 1.0 100 nATerminal capacitance CtVR = 1 V, f = 1 MHz 0.45 0.6 pFForward dynamic resistance rfIF = 10 mA, f = 100 MHz 0.80 1.2 Ω
■Electrical Characteristics Ta = 25°C ± 3°C
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.1: Anode2: CathodeSSMini2-F1 PackageUnit: mm
0.80+0.05
–0.03
0.60+0.05
–0.03
0.12+0.05
–0.02
1.20+0.05
–0.03
0+0
–0.05
0.30±0.05
0.01±0.01
1.60±0.05
0.01±0.01
1
2
0.80±0.05(0.80)
(0.60)
(0.15)
(0.60)
5˚
5˚
Marking Symbol: 7P
This product complies with the RoHS Directive (EU 2002/95/EC).