1

PIN Diodes

Publication date: October 2007 SKL00031AED
This product complies with the RoHS Directive (EU 2002/95/EC).
MA2SP060G

Silicon planar type

For high frequency switch
■Features
•Low terminal capacitance: Ct ≤ 0.6 pF
•Low forward dynamic resistance: rf ≤ 1.2 Ω
■Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage VR60 V
Forward current IF100 mA
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage VFIF = 10 mA 0.85 1.0 V
Reverse current IRVR = 60 V 1.0 100 nA
Terminal capacitance CtVR = 1 V, f = 1 MHz 0.45 0.6 pF
Forward dynamic resistance rfIF = 10 mA, f = 100 MHz 0.80 1.2 Ω
■Electrical Characteristics Ta = 25°C ± 3°C
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
■Package
•Code
SSMini2-F4
•Pin Name
1: Anode
2: Cathode
■Marking Symbol: 6P