Schottky Barrier Diodes (SBD)

1
Publication date: April 2004 SKH00032BEDMA2YD17

Silicon epitaxial planar type

For high frequency rectification
■Features
•Reverse voltage VR = 100 V is guaranteed
■Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating UnitReverse voltage VR100 VMaximum peak reverse voltageVRM 100 VForward current (Average) IF(AV) 300 mANon-repetitive peak forward IFSM 1.5 A
surge current *
Junction temperature Tj125 °CStorage temperature Tstg −55 to +125 °CNote) *: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
Marking Symbol: 2T
1: Anode2: Cathode Mini2-F1 PackageUnit: mm
5˚
1.6
±0.1
1
2
0.80
±0.05
0.55
±0.1
0.16
+0.1
–0.06
3.5
±0.1
2.6
±0.1
0.45
±0.1
5˚
0 to 0.1
0 to 0.3
0 to 0.1
Parameter Symbol Conditions Min Typ Max UnitForward voltage VFIF = 300 mA 0.50 0.58 VReverse current IRVR = 100 V 200 µATerminal capacitance CtVR = 0 V, f = 1 MHz 100 pFReverse recovery time *trr IF = IR = 100 mA 7 nsIrr = 0.1 IR , RL = 100 Ω
■Electrical Characteristics Ta = 25°C ± 3°C
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
Rs = 50 Ω
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
tp = 2 µs
tr = 0.35 ns
δ = 0.05
IF = 100 mA
IR = 100 mA
RL = 100 Ω
10%
Input Pulse Output Pulse
Irr = 0.1 IR
trtp
trr
VR
IF
t
t
ANote) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human bodyand the leakage of current from the operating equipment.3.*: trr measurement circuit
This product complies with the RoHS Directive (EU 2002/95/EC).