Schottky Barrier Diodes (SBD)
1
Publication date: April 2004 SKH00033BED
MA2YD21Silicon epitaxial planar type
For high frequency rectification
■Features
•Forward current (Average) IF(AV) = 1 A rectification is possible
•Low forward voltage: VF < 0.4 V
■Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating UnitReverse voltage VR15 VRepetitive peak reverse voltage VRRM 15 VForward current (Average) *1IF(AV) 1.0 ANon-repetitive peak forward IFSM 3Asurge current *2
Junction temperature Tj125 °CStorage temperature Tstg −55 to +125 °CMarking Symbol: 2X1: Anode
2: Cathode Mini2-F1 Package
Unit: mm
5˚
1.6
±0.1
1
2
0.80
±0.05
0.55
±0.1
0.16
+0.1
–0.06
3.5
±0.1
2.6
±0.1
0.45
±0.1
5˚
0 to 0.1
0 to 0.3
0 to 0.1
Parameter Symbol Conditions Min Typ Max UnitForward voltage VFIF = 1 A 0.4 VReverse current IRVR = 6 V 1.5 mATerminal capacitance CtVR = 0 V, f = 1 MHz 180 pFReverse recovery time *trr IF = IR = 100 mA 12 nsIrr = 10 mA, RL = 100 Ω■Electrical Characteristics Ta = 25°C ± 3°C
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
Rs = 50 Ω
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
tp = 2 µs
tr = 0.35 ns
δ = 0.05
IF = 100 mA
IR = 100 mA
RL = 100 Ω
10%
Irr = 10 mA
trtp
trr
VR
IF
t
t
AInput Pulse Output Pulse
Note) *1:Mounted on an alumina PC board*2: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human bodyand the leakage of current from the operating equipment.3.*: trr measurement circuit