Panasonic MA2YF80 manual

Fast Recovery Diodes (FRD)

Publication date: October 2006 SKJ00016CED 1

This product complies with RoHS Directive (EU 2002/95/EC).

MA2YF80

Silicon epitaxial planar type

For high speed switching circuits

For strobe light circuits (high voltage rectiﬁcation)

 Features

 High repetitive peak reverse voltage VRRM

 Short reverse recovery time trr

 Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Repetitive peak reverse voltage VRRM 800 V

Non-repetitive peak reverse surge voltage

VRSM 800 V

Forward current IF200 mA

Non-repetitive peak forward surge current

*IFSM 1A

Junction temperature Tj–40 to +150 °C

Storage temperature Tstg –40 to +150 °C

Note) *: 50 Hz sine wave 1 cycle (Non-repetitive peak current)

 Electrical Characteristics Ta = 25°C±3°C

Parameter Symbol Conditions Min Typ Max Unit

Forward voltage VFIF = 200 mA 2.5V

Reverse current IRRM1VRRM = 400 V 1

µA

IRRM2VRRM = 800 V 20

Terminal capacitance CtVR = 0 V, f = 1 MHz 2pF

Reverse recovery time *trr

IF = 100 mA, IR = 200 mA

Irr = 20 mA, RL = 100 Ω20 45 ns

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 3. *: trr measurement circuit

Bias Application Unit (N-50BU)

90%

Pulse Generator

(PG-10N)

Rs = 50 Ω

Wave Form Analyzer

(SAS-8130)

Ri = 50 Ω

tp = 2 µs

tr = 0.35 ns

δ = 0.05

IF = IR = 100 mA

RL = 100 Ω

10%

Input Pulse Output Pulse

Irr = 0.1 × IR

trtp

trr

Unit: mm1: Anode2: Cathode Mini2-F1 Package

5°

1.6±0.1

0.80±0.05

0.55±0.1 0.16+0.1

–0.06

3.5±0.1

2.6±0.1

0.45±0.1

5°

0 to 0.1

0 to 0.3