Switching Diodes
1
Publication date: November 2003 SKF00016BED
MA2Z001
Silicon epitaxial planar type
For switching circuits
■Features
•High breakdown voltage: VR = 200 V
•Small terminal capacitance Ct
•Suitable for high-density mounting
■Absolute Maximum Ratings Ta = 25°C
5˚
5˚
1.25
±0.1
0.7
±0.1
2.5
±0.2
1.7
±0.1
0.4
±0.1
0 to 0.1
(0.15)
0.16
0.5
±0.1
1
2
+0.1
–0.06
0.35
±0.1
0 to 0.1
Unit: mm
1 : Anode
2 : Cathode
EIAJ : SC-76 SMini2-F1 Package
Marking Symbol: 1K
Parameter Symbol Rating Unit
Reverse voltage VR200 V
Repetitive peak reverse voltage VRRM 250 V
Forward current (Average) IF(AV) 100 mA
Repetitive peak forward current IFRM 225 mA
Non-repetitive peak forward IFSM 500 mA
surge current *
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Note) *:t = 1 s
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage VFIF = 100 mA 1.2 V
Reverse current IRVR = 200 V 1.0 µA
Terminal capacitance CtVR = 0 V, f = 1 MHz 3.0 pF
Reverse recovery time *trr IF = IR = 10 mA 60 ns
Irr = 1 mA , RL = 100 Ω
■Electrical Characteristics Ta = 25°C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring method for diodes.
2. Absolute frequency of input and output is 20 MHz.
3. *: trr measurement circuit
Bias Application Unit N-50BU
90%
Pulse Generator
(PG-10N)
Rs = 50 Ω
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
tp = 2 µs
tr = 0.35 ns
δ = 0.05
IF = IR = 10 mA
RL = 100 Ω
10%
Input Pulse Output Pulse
Irr = 1 mA
trtp
trr
VR
IF
t
t
A
This product complies with the RoHS Directive (EU 2002/95/EC).