Schottky Barrier Diodes (SBD)

1
Publication date: October 2007 SKH00187AED
This product complies with the RoHS Directive (EU 2002/95/EC).
MA2Z7840G

Silicon epitaxial planar type

For super high speed switching
For small current rectification
Features
High-density mounting is possible
Forward current (Average)
IF(AV)
= 100 mA rectification is possible
Optimum for high frequency rectification because of its short
reverse recovery time trr
Low forward voltage VF and good rectification efficiency
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating UnitReverse voltage VR30 VRepetitive peak reverse voltage VRRM 30 VForward current (Average) IF(AV) 100 mAPeak forward current IFM 300 mANon-repetitive peak forward IFSM 1A
surge current *
Junction temperature Tj125 °CStorage temperature Tstg 55 to +125 °CParameter Symbol Conditions Min Typ Max UnitForward voltage VFIF = 100 mA 0.55 VReverse current IRVR = 30 V 15 µATerminal capacitance CtVR = 0 V, f = 1 MHz 20 pFReverse recovery time *trr IF = IR = 100 mA 2.0 nsIrr = 0.1 IR, RL = 100
Electrical Characteristics Ta = 25°C ± 3°C
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
Rs = 50
Wave Form Analyzer
(SAS-8130)
Ri = 50
tp = 2 µs
tr = 0.35 ns
δ = 0.05
IF = 100 mA
IR = 100 mA
RL = 100
10%
Input Pulse Output Pulse
Irr = 0.1 IR
trtp
trr
VR
IF
t
t
ANote) *: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human bodyand the leakage of current from the operating equipment.3.Absolute frequency of input and output is 250 MHz. 4.*: trr measurement circuit
Package
Code
SMini2-F3
Pin Name
1: Anode
2: Cathode
Marking Symbol: 2D