Schottky Barrier Diodes (SBD)
1
Publication date: April 2004 SKH00040BED
MA2ZD14
Silicon epitaxial planar type
For high speed switching
■Features
•Low forward voltage: VF < 0.40 V
■Absolute Maximum Ratings Ta = 25°C
Marking Symbol: 2N
Parameter Symbol Rating Unit
Reverse voltage VR20 V
Repetitive peak reverse voltage VRRM 20 V
Forward current (Average) IF(AV) 100 mA
Peak forward current IFM 300 mA
Non-repetitive peak forward IFSM 1A
surge current *
Junction temperature Tj125 °C
Storage temperature Tstg −55 to +125 °C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage VF1 IF = 5 mA 0.27 V
VF2 IF = 100 mA 0.40
Reverse current IRVR = 10 V 20 µA
Terminal capacitance CtVR = 0 V, f = 1 MHz 25 pF
Reverse recovery time *trr IF = IR = 100 mA 3 ns
Irr = 10 mA, RL = 100 Ω
■Electrical Characteristics Ta = 25°C ± 3°C
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
Rs = 50 Ω
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
tp = 2 µs
tr = 0.35 ns
δ = 0.05
IF = 100 mA
IR = 100 mA
RL = 100 Ω
10%
Input Pulse Output Pulse
Irr = 10 mA
trtp
trr
VR
IF
t
t
A
Unit: mm
1 : Anode
2 : Cathode
EIAJ : SC-76 SMini2-F1 Package
5˚
5˚
1.25
±0.1
0.7
±0.1
2.5
±0.2
1.7
±0.1
0.4
±0.1
0 to 0.1
(0.15)
0.16
0.5
±0.1
1
2
+0.1
–0.06
0.35
±0.1
0 to 0.1
Note) *: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3.Absolute frequency of input and output is 250 MHz.
4.*:t
rr measurement circuit
This product complies with the RoHS Directive (EU 2002/95/EC).