Schottky Barrier Diodes (SBD)

1
Publication date: April 2004 SKH00041BED
MA2ZD18

Silicon epitaxial planar type

For super high speed switching
■Features
•Low forward voltage VF
■Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating UnitReverse voltage VR20 VRepetitive peak reverse voltage VRRM 25 VForward current (Average) *1IF(AV) 500 mANon-repetitive peak forward IFSM 2A
surge current *2
Junction temperature Tj125 °CStorage temperature Tstg −55 to +125 °CMarking Symbol: 2PParameter Symbol Conditions Min Typ Max UnitForward voltage VFIF = 500 mA 0.42 VReverse current IRVR = 20 V 200 µATerminal capacitance CtVR = 0 V, f = 1 MHz 100 pFReverse recovery time *trr IF = IR = 100 mA 7 nsIrr = 10 mA, RL = 100 Ω
■Electrical Characteristics Ta = 25°C ± 3°C
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
Rs = 50 Ω
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
tp = 2 µs
tr = 0.35 ns
δ = 0.05
IF = 100 mA
IR = 100 mA
RL = 100 Ω
10%
Input Pulse Output Pulse
Irr = 10 mA
trtp
trr
VR
IF
t
t
A
Unit: mm
1: Anode
2: Cathode
EIAJ : SC-76 SMini2-F1 Package
5˚
5˚
1.25
±0.1
0.7
±0.1
2.5
±0.2
1.7
±0.1
0.4
±0.1
0 to 0.1
(0.15)
0.16
0.5
±0.1
1
2
+0.1
–0.06
0.35
±0.1
0 to 0.1
Note) *1:Mounted on an alumina PC board*2:The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human bodyand the leakage of current from the operating equipment.3.Absolute frequency of input and output is 250 MHz.4.*: trr measurement circuit
This product complies with the RoHS Directive (EU 2002/95/EC).