Fast Recovery Diodes (FRD)
1
Publication date: March 2004 SKJ00004BED
MA3D652 (MA6D52)
Silicon planar type (cathode common)
For high-frequency rectification
■Features
•Low forward voltage VF
•Fast reverse recovery time trr
•TO-220D (Full-pack package) with high dielectric breakdown
voltage
•Easy-to-mount, caused by its V cut lead end
■Absolute Maximum Ratings Ta = 25°C
Unit: mm
1: Anode
2: Cathode
(Common)
3: Anode
TO-220D-A1 Package
Parameter Symbol Rating Unit
Repetitive peak reverse voltage
VRRM 200 V
Non-repetitive peak reverse VRSM 200 V
surge voltage
Forward current (Average) IF(AV) 20 A
Non-repetitive peak forward IFSM 100 A
surge current *
Junction temperature Tj−40 to +150 °C
Storage temperature Tstg −40 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage VFIF = 10 A, TC = 25°C 1.0 V
Repetitive peak reverse current IRRM1 VRRM = 200 V, TC = 25°C 100 µA
IRRM2 VRRM = 200 V, Tj = 150°C10mA
Reverse recovery time *trr IF = 1 A, IR = 1 A 70 ns
Thermal resistance (j-c) Rth(j-c) 3.0 °C/W
Thermal resistance (j-a) Rth(j-a) 63 °C/W
■Electrical Characteristics Ta = 25°C ± 3°C
Internal Connection
D.U.T
trr
0.1 × IR
IF
IR
50 Ω
5.5 Ω
50 Ω
123
1.4
±0.2
1.6
±0.2
0.8
±0.1
0.55
±0.15
2.54
±0.30
5.08
±0.50
123
2.6
±0.1
2.9
±0.2
4.6
±0.2
φ 3.2
±0.1
3.0
±0.5
9.9
±0.3
15.0
±0.5
13.7
±0.2
4.2
±0.2
Solder Dip
Note) *:50 Hz sine wave 1 cycle (Non-repetitive peak current)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2.Absolute frequency of input and output is 10 MHz.
3.*:t
rr measurement circuit
Note) The part number in the parenthesis shows conventional part number.
This product complies with the RoHS Directive (EU 2002/95/EC).