Schottky Barrier Diodes (SBD)
1
Publication date: April 2004 SKH00042BED
MA3D749 (MA7D49), MA3D749A (MA7D49A)Silicon epitaxial planar type (cathode common)
For switching mode power supply
■Features
•Low forward voltage VF
•High dielectric breakdown voltage: > 5 kV
•Easy-to-mount, due to its V cut lead end
■Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Repetitive peak MA3D749 VRRM 40 V
reverse voltage MA3D749A 45
Forward current (Average) IF(AV) 5A
Non-repetitive peak forward IFSM 90 A
surge current *
Junction temperature Tj−40 to +125 °C
Storage temperature Tstg −40 to +125 °C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage VFIF = 2.5 A, TC = 25°C 0.55 V
Reverse current MA3D749 IRVR = 40 V, TC = 25°C 1.0 mA
MA3D749A VR = 45 V, TC = 25°C 1.0
Thermal resistance (j-c) Rth(j-c) 3.0 °C/W
■Electrical Characteristics Ta = 25°C ± 2°C
Unit: mm
1:Anode
2:Cathode
(Common)
3:Anode
TO-220D-A1 Package
1.4±0.2
1.6±0.2
0.8±0.1 0.55±0.15
2.54±0.30
5.08±0.50
123
2.6±0.1
2.9±0.2
4.6±0.2
φ 3.2±0.1
3.0±0.5
9.9±0.3
15.0±0.513.7±0.2
4.2±0.2
Solder Dip
Note) *:Half sine wave; 10 ms/cycle
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3.Absolute frequency of input and output is 200 MHz.
Note) The part numbers in the parenthesis show conventional part number.