Schottky Barrier Diodes (SBD)
1
Publication date: April 2004 SKH00043BED
MA3D750 (MA7D50), MA3D750A (MA7D50A)Silicon epitaxial planar type (cathode common)
For switching mode power supply
■Features
•Low forward voltage VF
•High dielectric breakdown voltage: > 5 kV
•Easy-to-mount, due to its V cut lead end
■Absolute Maximum Ratings TC = 25°C
Parameter Symbol Rating Unit
Repetitive peak MA3D750 VRRM 40 V
reverse-voltage MA3D750A 45
Forward current (Average) IF(AV) 10 A
Non-repetitive peak forward IFSM 120 A
surge current *
Junction temperature Tj−40 to +125 °C
Storage temperature Tstg −40 to +125 °C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage VFIF = 5 A, TC = 25°C 0.55 V
Reverse current MA3D750 IRVR = 40 V, TC = 25°C3mA
MA3D750A VR = 45 V, TC = 25°C3
Thermal resistance (j-c) Rth(j-c) 3.0 °C/W
■Electrical Characteristics TC = 25°C ± 3°C
Unit: mm
1.4±0.2
1.6±0.2
0.8±0.1 0.55±0.15
2.54±0.30
5.08±0.50
123
2.6±0.1
2.9±0.2
4.6±0.2
φ 3.2±0.1
3.0±0.5
9.9±0.3
15.0±0.513.7±0.2
4.2±0.2
Solder Dip
Note) *:Half sine wave; 10 ms/cycle
Note) The part numbers in the parenthesis show conventional part number.
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3.Absolute frequency of input and output is 150 MHz.
1:Anode
2:Cathode
(Common)
3:Anode
TO-220D-A1 Package