Schottky Barrier Diodes (SBD)
1
Publication date: April 2004 SKH00044BED
MA3D752 (MA7D52), MA3D752A (MA7D52A)
Silicon epitaxial planar type (cathode common)
For switching mode power supply
Features
Low forward voltage VF
High dielectric breakdown voltage: > 5 kV
Easy-to-mount, due to its V cut lead end
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Repetitive peak MA3D752 VRRM 40 V
reverse voltage MA3D752A 45
Non-repetitive peak
MA3D752 VRSM 40 V
forward surge voltage
Forward current (Average) IF(AV) 20 A
Non-repetitive peak forward IFSM 120 A
surge current *
Junction temperature Tj40 to +125 °C
Storage temperature Tstg 40 to +125 °C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage VFIF = 10 A, TC = 25°C 0.55 V
Reverse current MA3D752 IRVR = 40 V, TC = 25°C5mA
MA3D752A VR = 45 V, TC = 25°C5
Thermal resistance (j-c) Rth(j-c) 3.0 °C/W
Electrical Characteristics Ta = 25°C ± 3°C
Unit: mm
1.4±0.2
1.6±0.2
0.8±0.1 0.55±0.15
2.54±0.30
5.08±0.50
123
2.6±0.1
2.9±0.2
4.6±0.2
φ 3.2±0.1
3.0±0.5
9.9±0.3
15.0±0.513.7±0.2
4.2±0.2
Solder Dip
Note) *:Half sine wave; 10 ms/cycle
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3.Absolute frequency of input and output is 100 MHz.
Note) The part numbers in the parenthesis show conventional part number.
1:Anode
2:Cathode
(Common)
3: Anode
TO-220D-A1 Package
This product complies with the RoHS Directive (EU 2002/95/EC).