Fast Recovery Diodes (FRD)

Publication date: October 2007 SKJ00021AED 1
This product complies with RoHS Directive (EU 2002/95/EC).
MA3DF40

Silicon Mesa type

For high frequency rectification
For plasma display panel drive
Features
High switching speed trr
Soft recovery
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Repetitive peak reverse voltage VRRM 370 V
Non-repetitive peak reverse surge voltage
VRSM 430 V
Forward current TC = 25°C IF20 A
Non-repetitive peak forward surge current
*IFSM 100 A
Junction temperature Tj–40 to +150 °C
Storage temperature Tstg –40 to +150 °C
Note) *: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Electrical Characteristics Ta = 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage VFIF = 20 mA 1.2 1.4 V
Reverse current IRRM VRRM = 370 V 10 mA
Reverse recovery time *trr
IF = 0.5 A, IR = 1.0 A
Irr = 0.25 A 20 35 ns
Thermal resistance (j-a) Rth(j-c) 3.0 °C/W
Thermal resistance (j-c) Rth(j-a) 63 °C/W
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 10 MHz.
3. *: trr measurement circuit
D.U.T
trr
0.25 × IR
IF
IR
50 Ω
5.5 Ω
50 Ω
Package
Code
TO-220D-A1
Pin Name
1: Anode
2: Cathode
3: Anode
Marking Symbol: MA3DF40
Intemal Connection
1 32