Schottky Barrier Diodes (SBD)
1
Publication date:October 2007 SKH00197AED
This product complies with the RoHS Directive (EU 2002/95/EC).
MA3J7420G
Silicon epitaxial planar type
For high speed switching
For wave detection
■Features
•Two MA3X716 is contained in one package (series connection)
•
Forward voltage V
F
, optimum for low voltage rectification
•Optimum for high frequency rectification because of its short
reverse recovery time trr
■Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage VR30 V
Maximum peak reverse voltage
VRM 30 V
Forward current Single IF30 mA
Series 20
Peak forward current
Single IFM 150 mA
Series 110
Junction temperature Tj125 °C
Storage temperature Tstg −55 to +125 °C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage VF1 IF = 1 mA 0.4 V
VF2 IF = 30 mA 1.0
Reverse current IRVR = 30 V 1 µA
Terminal capacitance CtVR = 1 V, f = 1 MHz 1.5 pF
Reverse recovery time *trr IF = IR = 10 mA 1.0 ns
Irr = 1 mA, RL = 100 Ω
Detection efficiency ηVIN = 3 V(peak) , f = 30 MHz 65 %
RL = 3.9 kΩ, CL = 10 pF
■Electrical Characteristics Ta = 25°C ± 3°C
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
Rs = 50 Ω
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
tp = 2 µs
tr = 0.35 ns
δ = 0.05
IF = 10 mA
IR = 10 mA
RL = 100 Ω
10%
Input Pulse Output Pulse
Irr = 1 mA
trtp
trr
VR
IF
t
t
A
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
fep3.Absolute frequency of input and output is 2 GHz.
4.*: trr measurement circuit
■Package
•Code
SMini3-F2
•Pin Name
1: Anode 1
2: Cathode 2
3: Cathode 1
Anode 2
■Marking Symbol: M1U
■Internal Connection
12
3