Schottky Barrier Diodes (SBD)

Publication date: October 2008 SKH00234AED 1
This product complies with the RoHS Directive (EU 2002/95/EC).
MA3J745EG

Silicon epitaxial planar type

For high speed switching
For wave detection
Features
Two elements are contained in one package, allowing highdensity
mounting
Low forward voltage VF , optimum for low voltage rectification
Optimum for high frequency rectification because of its short
reverse recovery time trr
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage VR30 V
Maximum peak reverse voltage VRM 30 V
Forward current Single IF
30 mA
Double 20
Peak forward current Single IFM
150 mA
Double 110
Junction tempe rature Tj125 °C
Storage time Tstg –55 to +125 °C
Electrical Characteristics Ta = 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage VF1 IF = 1 mA 0.3 V
VF2 IF = 30 mA 1.0
Reverse current IRVR = 30 V 30 mA
Terminal capacitan ce CtVR = 1 V, f = 1 MHz 1.5 pF
Reverse recovery time *trr
IF = IR = 100 mA, Irr = 10 mA,
RL = 100 W1.0 ns
Detection efficiency ηVIN = 3 V(peak) , f = 30 MHz
RL = 3.9 kW, CL = 10 pF 65 %
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3. Absolute frequency of input and output is 2 GHz
4. *: trr measurement circuit
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
Rs = 50 Ω
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
tp = 2 µs
tr = 0.35 ns
δ = 0.05
IF = 10 mA
IR = 10 mA
RL = 100 Ω
10%
Input Pulse Output Pulse
Irr = 1 mA
trtp
trr
VR
IF
t
t
A
Package
Code
SMini3-F2
Pin Name
1: Anode 1
2: Anode 2
3: Cathode
Marking Symbol: M3D
Internal Connection
1 2
3