Switching Diodes
1
Publication date: October 2007 SKF00082AED
This product complies with the RoHS Directive (EU 2002/95/EC).
Note) *:t = 1 s
MA3S132AG, MA3S132KG
Silicon epitaxial planar type
For switching circuits
■Features
•Short reverse recovery time trr
•Small terminal capacitance Ct
•Allowing high-density mounting
■Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage VR80 V
Maximum peak reverse voltage VRM 80 V
Forward current IF100 mA
Peak forward current IFM 225 mA
Non-repetitive peak forward IFSM 500 mA
surge current
*
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage VFIF = 100 mA 1.2 V
Reverse voltage VRIR = 100 µA80V
Reverse current IRVR = 75 V 100 nA
Terminal capacitance CtVR = 0 V, f = 1 MHz 2 pF
Reverse recovery time *trr IF = 10 mA, VR = 6 V 3 ns
Irr = 0.1 IR , RL = 100 Ω
■Electrical Characteristics Ta = 25°C ± 3°C
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
Rs = 50 Ω
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
tp = 2 µs
tr = 0.35 ns
δ = 0.05
IF = 10 mA
VR = 6 V
RL = 100 Ω
10%
Input Pulse Output Pulse
Irr = 0.1 IR
trtp
trr
VR
IF
t
t
A
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2.Absolute frequency of input and output is 100 MHz.
3.*: trr measurement circuit
12
3
12
3
AK
■Package
•Code
SSMini3-F3
•Pin Name
MA3S132AG MA3S132KG
1: Cathode 1: Anode
2: N.C. 2: N.C.
3: Anode 3: Cathode
■Marking Symbol
MA3S132AG: MB
MA3S132KG: MI
■Internal Connection