Switching Diodes
1
Publication date: March 2004 SKF00024BED
Note) *:t = 1 s
MA3S132D (MA132WA), MA3S132E (MA132WK)
Silicon epitaxial planar type
For switching circuits
■Features
•Short reverse recovery time trr
•Small terminal capacitance Ct
•Two isolated elements contained in one package, allowing high-
density mounting
■Absolute Maximum Ratings Ta = 25°C
Unit: mm
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage VFIF = 100 mA 1.2 V
Reverse voltage VRIR = 100 µA80V
Reverse current IRVR = 75 V 100 nA
Terminal capacitance
MA3S132D
CtVR = 0 V, f = 1 MHz 15 pF
MA3S132E
2
Reverse recovery time *
MA3S132D
trr IF = 10 mA, VR = 6 V 10 ns
MA3S132E
Irr = 0.1 IR , RL = 100 Ω3
■Electrical Characteristics Ta = 25°C ± 3°C
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
Rs = 50 Ω
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
tp = 2 µs
tr = 0.35 ns
δ = 0.05
IF = 10 mA
VR = 6 V
RL = 100 Ω
10%
Input Pulse Output Pulse
Irr = 0.1 IR
trtp
trr
VR
IF
t
t
A
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2.Absolute frequency of input and output is 100 MHz.
3.*: trr measurement circuit
Note) The part numbers in the parenthesis show conventional part number.
Marking Symbol:
• MA3S132D: MO • MA3S132E: MU
Internal Connection
12
3
1
3
2
Parameter Symbol Rating Unit
Reverse voltage VR80 V
Maximum peak reverse voltage
VRM 80 V
Forward current Single IF100 mA
Double 150
Peak forward Single IFM 225 mA
current Double 340
Non-repetitive peak
Single IFSM 500 mA
forward surge current
*Double 750
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
EIAJ: SC-81
SSMini3-F2 Package
MA3S132D MA3S132E
1 Cathode 1 Anode 1
2 Cathode 2 Anode 2
3 Anode Cathode
0.28±0.05
3
12
0.28±0.05
(0.80)
1.60+0.05
–0.03
0.12+0.05
–0.02
0.60+0.05
–0.03
(0.80)
(0.51) (0.51)
0 to 0.1
(0.15)
3˚
(0.44)(0.44)
0.88
(0.375)
+0.05
–0.03
0.80±0.05
(0.80)
1.60±0.05
3˚
DE
This product complies with the RoHS Directive (EU 2002/95/EC).