Switching Diodes
1
Publication date: October 2007 SKF00086AED
This product complies with the RoHS Directive (EU 2002/95/EC).
MA3S1330GSilicon epitaxial planar type
For switching circuits
■Features
•Two isolated elements contained in one package, allowing high-
density mounting
•Two diodes are connected in series in the package
■Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage VFIF = 100 mA 1.2 V
Reverse voltage VRIR = 100 µA80V
Reverse current IRVR = 75 V 100 nA
Terminal capacitance Ct *1VR = 0 V, f = 1 MHz 5.5 pF
Ct *23.0
Reverse recovery time *3trr *1IF = 10 mA, VR = 6 V 150 ns
trr *2Irr = 0.1 IR , RL = 100 Ω9
■Electrical Characteristics Ta = 25°C ± 3°C
1
3
2
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
Rs = 50 Ω
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
tp = 2 µs
tr = 0.35 ns
δ = 0.05
IF = 10 mA
VR = 6 V
RL = 100 Ω
10%
Input Pulse Output Pulse
Irr = 0.1 IR
trtp
trr
VR
IF
t
t
A
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2.Absolute frequency of input and output is 100 MHz.
3.*1: Between pins 2 and 3
*2: Between pins 1 and 3
*3:trr measurement circuit
Parameter Symbol Rating Unit
Reverse voltage VR80 V
Maximum peak reverse voltage
VRM 80 V
Forward current Single IF100 mA
Series 65
Peak forward Single IFM 200 mA
current Series 130
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C