Panasonic MA3S133 (MA133) manual

Switching Diodes
1
Publication date: February 2005 SKF00027CED
MA3S133 (MA133)
Silicon epitaxial planar type
For switching circuits
■Features
•Two isolated elements contained in one package, allowing high-
density mounting
•Two diodes are connected in series in the package
■Absolute Maximum Ratings Ta = 25°C
Unit: mm
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage VFIF = 100 mA 1.2 V
Reverse voltage VRIR = 100 µA80V
Reverse current IRVR = 75 V 100 nA
Terminal capacitance Ct *1VR = 0 V, f = 1 MHz 5.5 pF
Ct *23.0
Reverse recovery time *3trr *1IF = 10 mA, VR = 6 V 150 ns
trr *2Irr = 0.1 IR , RL = 100 Ω9
■Electrical Characteristics Ta = 25°C ± 3°C
Marking Symbol: MP
1
3
2
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
Rs = 50 Ω
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
tp = 2 µs
tr = 0.35 ns
δ = 0.05
IF = 10 mA
VR = 6 V
RL = 100 Ω
10%
Input Pulse Output Pulse
Irr = 0.1 IR
trtp
trr
VR
IF
t
t
A
Internal Connection
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2.Absolute frequency of input and output is 100 MHz.
3.*1: Between pins 2 and 3
*2: Between pins 1 and 3
*3:trr measurement circuit
Note) The part number in the parenthesis shows conventional part number.
Parameter Symbol Rating Unit
Reverse voltage VR80 V
Maximum peak reverse voltage VRM 80 V
Forward current Single IF100 mA
Series 65
Peak forward Single IFM 200 mA
current Series 130
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
1:Anode 1
2:Cathode 2
3:Cathode 1
Anode 2
EIAJ: SC-81 SSMini3-F2 Package
0.28 ±0.05
3
12
0.28
±0.05
(0.80)
1.60
+0.05
–0.03
0.12
+0.05
–0.02
0.60
+0.05
–0.03
(0.80)
(0.51) (0.51)
0 to 0.1
(0.15)
3˚
(0.44)(0.44)
0.88
(0.375)
+0.05 –0.03
0.80
±0.05
(0.80)
1.60
±0.05
3˚
This product complies with the RoHS Directive (EU 2002/95/EC).