Schottky Barrier Diodes (SBD)

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Publication date: October 2007 SKH00202AED
This product complies with the RoHS Directive (EU 2002/95/EC).
MA3S7810G

Silicon epitaxial planar type

For high speed switching
For wave detection
■Features
•High-density mounting is possible
•Optimum for high frequency rectification because of its short
reverse recovery time trr
•Low forward voltage VF and good rectification efficiency
■Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating UnitReverse voltage VR30 VMaximum peak reverse voltage VRM 30 VForward current IF30 mAPeak forward current IFM 150 mAJunction temperature Tj125 °CStorage temperature Tstg −55 to +125 °C
■Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max UnitForward voltage VF1 IF = 1 mA 0.4 VVF2 IF = 30 mA 1.0Reverse current IRVR = 30 V 300 nATerminal capacitance CtVR = 1 V, f = 1 MHz 1.5 pFReverse recovery time *trr IF = IR = 10 mA 1.0 nsIrr = 1 mA, RL = 100 ΩDetection efficiency ηVIN = 3 V(peak) , f = 30 MHz 65 %RL = 3.9 kΩ, CL = 10 pF
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
R
s
= 50 Ω
Wave Form Analyzer
(SAS-8130)
R
i
= 50 Ω
t
p
= 2 µs
t
r
= 0.35 ns
δ = 0.05
I
F
= 10 mA
I
R
= 10 mA
R
L
= 100 Ω
10%
Input Pulse Output Pulse
I
rr
= 1 mA
t
r
t
p
t
rr
V
R
I
F
t
t
ANote) 1.Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human bodyand the leakage of current from the operating equipment.3.Absolute frequency of input and output is 2 GHz.4.*: trr measurement circuit
■Package
•Code
SSMini3-F3
•Pin Name
1: Anode
2: N.C.
3: Cathode
■Marking Symbol: M1L
■Internal Connection
12
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