Panasonic MA3S781DG, MA3S781EG manual

Publication date: October 2007 SKH00203AED

Schottky Barrier Diodes (SBD)

This product complies with the RoHS Directive (EU 2002/95/EC).

MA3S781DG, MA3S781EG

Silicon epitaxial planar type

For high speed switching

For wave detection

■Features

•Two MA3S7810G is contained in one package

•High-density mounting is possible

•Low forward voltage VF

■Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Reverse voltage VR30 V

Maximum peak reverse voltage

VRM 30 V

Forward current

Single IF30 mA

Double 20

Peak forward current

Single IFM 150 mA

Double 110

Junction temperature Tj125 °C

Storage temperature Tstg −55 to +125 °C

Parameter Symbol Conditions Min Typ Max Unit

Forward voltage VF1 IF = 1 mA 0.4 V

VF2 IF = 30 mA 1.0

Reverse current IRVR = 30 V 1 µA

Terminal capacitance CtVR = 1 V, f = 1 MHz 1.5 pF

Reverse recovery time *trr IF = IR = 10 mA 1.0 ns

Irr = 1 mA, RL = 100 Ω

Detection efficiency ηVIN = 3 V(peak) , f = 30 MHz 65 %

RL = 3.9 kΩ, CL = 10 pF

■Electrical Characteristics Ta = 25°C ± 3°C

Bias Application Unit (N-50BU)

90%

Pulse Generator

(PG-10N)

Rs = 50 Ω

Wave Form Analyzer

(SAS-8130)

Ri = 50 Ω

tp = 2 µs

tr = 0.35 ns

δ = 0.05

IF = 10 mA

IR = 10 mA

RL = 100 Ω

10%

Input Pulse Output Pulse

Irr = 1 mA

trtp

trr

Note) 1.

Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.

2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body

and the leakage of current from the operating equipment.

3.Absolute frequency of input and output is 2 GHz. 4. *: trr measurement circuit

■Package

•Code

SSMini3-F3

•Pin Name

MA3S781DG MA3S781EG

1: Cathode 1 1: Anode 1

2: Cathode 2 2: Anode 2

3: Anode 3: Cathode

■Marking Symbol

MA3S781DG: M2P

MA3S781EG: M2R

■Internal Connection