Schottky Barrier Diodes (SBD)
Publication date: October 2007 SKH00211AED 1
This product complies with the RoHS Directive (EU 2002/95/EC).
MA3SD29FGSilicon epitaxial planar type
For super high speed switching circuits
Features
Low forward voltage VF : < 0.42 V (at IF = 100 mA)
Optimum for high-frequency rectification
Short reverse recovery time trr
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage VR30 V
Repetitive peak reverse voltage VRRM 30 V
Forward current (Average) Single IF(AV)
100 mA
Series 75
Peak forward current Single IFM
200 mA
Series 150
Non-repetitive peak forward surge current
*IFSM 1 A
Junction temperature Tj125 °C
Storage temperature Tstg –55 to +125 °C
Note) *: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Electrical Characteristics Ta = 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage VF1 IF = 10 mA 0.25 0.29 V
VF2 IF = 100 mA 0.39 0.42
Reverse current IR1 VR = 10 V 25
mA
IR2 VR = 30 V 120
Terminal capacitance CtVR = 0 V, f = 1 MHz 11 pF
Reverse recovery time *trr
IF = IR = 100 mA, Irr = 10 mA,
RL = 100 W1 ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 250 MHz
3. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
4. *: trr measurement circuit
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
Rs = 50 Ω
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
tp = 2 µs
tr = 0.35 ns
δ = 0.05
IF = IR = 100 mA
RL = 100 Ω
10%
Input Pulse Output Pulse
Irr = 10 mA
trtp
trr
VR
IF
t
t
A
Package
Code
SSMini3-F3
Pin Name
1: Anode 1
2: Cathode 2
3: Cathode 1
Anode 2
Internal Connection
1
3
2