Schottky Barrier Diodes (SBD)

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Publication date: October 2007 SKH00213AED
This product complies with the RoHS Directive (EU 2002/95/EC).
MA3SE020G

Silicon epitaxial planar type

For cellular phone
■Features
•High-frequency wave detection is possible
•Low forward voltage VF
•Small terminal capacitance Ct
■Absolute Maximum Ratings Ta = 25°C
■Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage VF1 IF = 1 mA 0.40 V
VF2 IF = 35 mA 1.0
Reverse current IRVR = 15 V 200 nA
Terminal capacitance CtVR = 0 V, f = 1 MHz 1.2 pF
Forward dynamic resistance rfIF = 5 mA 9 Ω
Parameter Symbol Rating Unit
Reverse voltage VR20 V
Maximum peak reverse voltage VRM 20 V
Forward current Single IF35 mA
Series 25
Peak forward Single IFM 100 mA
current Series 70
Junction temperature Tj125 °C
Storage temperature Tstg −55 to +125 °C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3.Absolute frequency of input and output is 2 GHz
■Package
•Code
SSMini3-F3
•Pin Name
1: Anode 1
2: Cathode 2
3: Cathode 1
Anode 2
■Marking Symbol: M6B
■Internal Connection
12
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