Fast Recovery Diodes (FRD)
1
Publication date: February 2008 SKJ00014CED
This product complies with the RoHS Directive (EU 2002/95/EC).
MA3U649
Silicon planar type (cathode common)
For high-frequency rectification
■Features
•Small U-type package for surface mounting
•Low-loss type with fast reverse recovery time trr
•Cathode common dual type
■Absolute Maximum Ratings
D.U.T
trr
0.1 × IR
IF
IR
50 Ω
5.5 Ω
50 Ω
Parameter Symbol Rating Unit
Repetitive peak reverse voltage VRRM 200 V
Non-repetitive peak reverse VRSM 200 V
surge voltage
Forward current (Average) *1IF(AV) 5A
Non-repetitive peak forward
IFSM 40 A
surge current *2
Junction temperature Tj−40 to +150 °C
Storage temperature Tstg −40 to +150 °C
Note) *1:TC = 25°C
*2:Half sine-wave; 10 ms/cycle
■Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage VFIF = 2.5 A, TC = 25°C 0.98 V
Repetitive peak reverse current IRRM1 VRRM = 200 V, TC = 25°C20µA
IRRM2 VRRM = 200 V, Tj = 150°C2mA
Reverse recovery time *2trr IF = 1 A, IR = 1 A 30 ns
Thermal resistance (j-c) *1Rth(j-c) 12.5 °C/W
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2.*1: TC = 25°C
*2:trr measurement circuit
■Package
•Code
U-G2
•Pin Name
1: Anode
2: Cathode (Common)
3: Anode