Switching Diodes
1
Publication date: November 2003 SKF00033CED
Parameter Symbol Rating Unit
Reverse voltage VR80 V
Maximum peak reverse voltage VRM 80 V
Forward current Single IF100 mA
Double 150
Peak forward Single IFM 225 mA
current Double 340
Non-repetitive peak
Single IFSM 500 mA
forward surge current
*Double 750
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
MA3X152D (MA152WA), MA3X152E (MA152WK)Silicon epitaxial planar type
For high-speed switching circuits
■Features
•Short reverse recovery time trr
•Small terminal capacitance, Ct
■Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage VFIF = 100 mA 1.2 V
Reverse voltage VRIR = 100 µA80V
Reverse current IRVR = 75 V 100 nA
Terminal capacitance
MA3X152D
CtVR = 0 V, f = 1 MHz 15 pF
MA3X152E
2
Reverse recovery time *
MA3X152D
trr IF = 10 mA, VR = 6 V 10 ns
MA3X152E
Irr = 0.1 IR , RL = 100 Ω3
■Electrical Characteristics Ta = 25°C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring method for diodes.
2. Absolute frequency of input and output is 100 MHz.
3. *: trr measurement circuit
Bias Application Unit N-50BU
90%
Pulse Generator
(PG-10N)
R
s
= 50 Ω
Wave Form Analyzer
(SAS-8130)
R
i
= 50 Ω
t
p
= 2 µs
t
r
= 0.35 ns
δ = 0.05
I
F
= 10 mA
V
R
= 6 V
R
L
= 100 Ω
10%
Input Pulse Output Pulse
I
rr
= 0.1 I
R
t
r
t
p
t
rr
V
R
I
F
t
t
A
EIAJ: SC-59
Mini3-G1 Package
Marking Symbol
• MA3X152D: MO • MA3X152E: MU
Internal Connection
DE
MA3X152D MA3X152E
1 Cathode 1 Anode 1
2 Cathode 2 Anode 2
3 Anode1, 2
Cathode 1, 2
Unit: mm
0.40+0.10
–0.05
(0.65) 1.50+0.25
–0.05
2.8+0.2
–0.3
2
1
3
(0.95) (0.95)
1.9±0.1
2.90+0.20
–0.05
0.16+0.10
–0.06
0.4±0.2
5˚
10˚
0 to 0.1 1.1+0.2
–0.1
1.1+0.3
–0.1
Note) *: t = 1 s
Note) The part numbers in the parenthesis show conventional part number.
12
3
12
3