Switching Diodes
1
Publication date: February 2005 SKF00036DED
MA3X153 (MA153), MA3X153A (MA153A)Silicon epitaxial planar type
For switching circuits
■Features
•Small terminal capacitance Ct
•Two diodes are connected in series in the package
■Absolute Maximum Ratings Ta = 25°C
Unit: mm
Parameter Symbol Rating Unit
Reverse voltage
MA3X153
VR40 V
MA3X153A
80
Maximum peak
MA3X153
VRM 40 V
reverse voltage
MA3X153A
80
Forward current Single IF100 mA
Series 65
Peak forward Single IFM 200 mA
current Series 130
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Internal Connection
Marking Symbol
• MA3X153: MC • MA3X153A: MP
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage VFIF = 100 mA 1.2 V
Reverse voltage MA3X153 VRIR = 100 µA40V
MA3X153A
80
Reverse current MA3X153 IRVR = 40 V 100 nA
MA3X153A
VR = 75 V 100
Terminal capacitance CtVR = 0 V, f = 1 MHz 5.0 pF
Reverse recovery time *3trr*1IF = 10 mA, VR = 6 V 150 ns
trr*2Irr = 0.1 IR, RL = 100 Ω9ns
■Electrical Characteristics Ta = 25°C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2.Absolute frequency of input and output is 100 MHz.
3.*1: Between pins 2 and 3
*2:Between pins 1 and 3
*3:trr measurement circuit
12
3
0.40+0.10
–0.05
(0.65) 1.50+0.25
–0.05
2.8+0.2
–0.3
2
1
3
(0.95) (0.95)
1.9±0.1
2.90+0.20
–0.05
0.16+0.10
–0.06
0.4±0.2
5˚
10˚
0 to 0.1 1.1+0.2
–0.1
1.1+0.3
–0.1
1:Anode 1
2:Cathode 2
3:Anode 2
Cathode 1
EIAJ: SC-59 Mini3-G1 Package
Note) The part numbers in the parenthesis show conventional part number.
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
R
s
= 50 Ω
Wave Form Analyzer
(SAS-8130)
R
i
= 50 Ω
t
p
= 2 µs
t
r
= 0.35 ns
δ = 0.05
I
F
= 10 mA
V
R
= 6 V
R
L
= 100 Ω
10%
Input Pulse Output Pulse
I
rr
= 0.1 I
R
t
r
t
p
t
rr
V
R
I
F
t
t
A