Switching Diodes
1
Publication date: March 2004 SKF00042CED
MA3X199 (MA199)
Silicon epitaxial planar type
For high voltage switching circuit
■Features
•High breakdown voltage: VR = 200 V
•Short reverse recovery time trr
•Automatic mounting is possible
■Absolute Maximum Ratings Ta = 25°C
Unit: mm
Parameter Symbol Rating Unit
Reverse voltage VR200 V
Repetitive peak reverse voltage
VRRM 250 V
Forward current (Average) IF(AV) 100 mA
Repetitive peak forward current
IFRM 225 mA
Non-repetitive peak forward IFSM 500 mA
surge current *
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage VFIF = 100 mA 1.2 V
Reverse current IRVR = 200 V 1 .0 µA
Terminal capacitance CtVR = 0 V, f = 1 MHz 3.0 pF
Reverse recovery time *trr IF = IR = 10 mA 60 ns
Irr = 1 mA, RL = 100 Ω
■Electrical Characteristics Ta = 25°C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2.Absolute frequency of input and output is 20 MHz.
3. *: trr measurement circuit
Internal Connection
Marking Symbol: M3A
Note) *:t = 1 s
0.40+0.10
–0.05
(0.65) 1.50+0.25
–0.05
2.8+0.2
–0.3
2
1
3
(0.95) (0.95)
1.9±0.1
2.90+0.20
–0.05
0.16+0.10
–0.06
0.4±0.2
5˚
10˚
0 to 0.1 1.1+0.2
–0.1
1.1+0.3
–0.1
12
3
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
R
s
= 50 Ω
Wave Form Analyzer
(SAS-8130)
R
i
= 50 Ω
t
p
= 2 µs
t
r
= 0.35 ns
δ = 0.05
I
F
= 10 mA
I
R
= 10 mA
R
L
= 100 Ω
10%
Input Pulse Output Pulse
I
rr
= 1mA
t
r
t
p
t
rr
V
R
I
F
t
t
A
1:Anode
2:N.C.
3:Cathode
EIAJ: SC-59 Mini3-G1 Package
Note) The part number in the parenthesis shows conventional part number.
This product complies with the RoHS Directive (EU 2002/95/EC).