Schottky Barrier Diodes (SBD)
1
Publication date: February 2005 SKH00075DED
MA3X715 (MA715)
Silicon epitaxial planar type
For high frequency rectification
■Features
•Low forward voltage VF
•Optimum for high frequency rectification because of its short
reverse recovery time trr
■Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage VR30 V
Maximum peak reverse voltage
VRM 30 V
Forward current Single IF30 mA
Series 20
Peak forward Single IFM 150 mA
current Series 110
Junction temperature Tj125 °C
Storage temperature Tstg −55 to +125 °C
Internal Connection
Marking Symbol: M2Y
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage VF1 IF = 1 mA 0.3 V
VF2 IF = 30 mA 1.0
Reverse current IRVR = 30 V 30 µA
Terminal capacitance CtVR = 1 V, f = 1 MHz 1.5 pF
Reverse recovery time *trr IF = IR = 10 mA 1.0 ns
Irr = 1 mA, RL = 100 Ω
Detection efficiency ηVIN = 3 V(peak) , f = 30 MHz 65 %
RL = 3.9 kΩ, CL = 10 pF
■Electrical Characteristics Ta = 25°C ± 3°C
12
3
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
Rs = 50 Ω
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
tp = 2 µs
tr = 0.35 ns
δ = 0.05
IF = 10 mA
IR = 10 mA
RL = 100 Ω
10%
Input Pulse Output Pulse
Irr = 1 mA
trtp
trr
VR
IF
t
t
A
Unit: mm
1:Anode 1
2:Cathode 2
3:Cathode 1
Anode 2
EIAJ: SC-59 Mini3-G1 Package
0.40+0.10
–0.05
(0.65) 1.50+0.25
–0.05
2.8+0.2
–0.3
2
1
3
(0.95) (0.95)
1.9±0.1
2.90+0.20
–0.05
0.16+0.10
–0.06
0.4±0.2
5˚
10˚
0 to 0.1 1.1+0.2
–0.1
1.1+0.3
–0.1
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3.Absolute frequency of input and output is 2 GHz. 4. *: trr measurement circuit
Note) The part number in the parenthesis shows conventional part number.
This product complies with the RoHS Directive (EU 2002/95/EC).