Schottky Barrier Diodes (SBD)
1
Publication date: February 2005 SKH00076DEDMA3X716 (MA716)
Silicon epitaxial planar type
For switching
For wave detection
■Features
•Two MA3X704A (MA704A) is contained in one package
(series connection)
•
Low forward voltage V
F
, optimum for low voltage rectification
•Optimum for high frequency rectification because of its short
reverse recovery time (trr)
■Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating UnitReverse voltage VR30 VMaximum peak reverse voltageVRM 30 VPeak forward currentSingle IFM 150 mASeries 110Forward current Single IF30 mASeries 20Junction temperature Tj125 °CStorage temperature Tstg −55 to +125 °CInternal Connection
Marking Symbol: M1U
Parameter Symbol Conditions Min Typ Max UnitForward voltage VF1 IF = 1 mA 0.4 VVF2 IF = 30 mA 1.0Reverse current IRVR = 30 V 1 µATerminal capacitance CtVR = 1 V, f = 1 MHz 1.5 pFReverse recovery time *trr IF = IR = 10 mA 1.0 nsIrr = 1 mA, RL = 100 ΩDetection efficiency ηVIN = 3 V(peak) , f = 30 MHz 65 %RL = 3.9 kΩ, CL = 10 pF■Electrical Characteristics Ta = 25°C ± 3°C
12
3
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
Rs = 50 Ω
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
tp = 2 µs
tr = 0.35 ns
δ = 0.05
IF = 10 mA
IR = 10 mA
RL = 100 Ω
10%
Input Pulse Output Pulse
Irr = 1 mA
trtp
trr
VR
IF
t
t
AUnit: mm1:Anode 12:Cathode 23:Cathode 1Anode 2EIAJ: SC-59 Mini3-G1 Package0.40+0.10
–0.05
(0.65) 1.50+0.25
–0.05
2.8+0.2
–0.3
2
1
3
(0.95) (0.95)
1.9±0.1
2.90+0.20
–0.05
0.16+0.10
–0.06
0.4±0.2
5˚
10˚
0 to 0.1 1.1+0.2
–0.1
1.1+0.3
–0.1
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human bodyand the leakage of current from the operating equipment.3.Absolute frequency of input and output is 2 GHz. 4. *: trr measurement circuitNote) The part number in the parenthesis shows conventional part number.