Schottky Barrier Diodes (SBD)
1
Publication date: April 2004 SKH00084CED
MA3X748 (MA748)
Silicon epitaxial planar type
For high frequency rectification
Features
Low VF type of MA3X720 (MA720)
Low forward voltage VF and good rectification efficiency
Optimum for high frequency rectification because of its short
reverse recovery time trr
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage VR20 V
Repetitive peak reverse voltage VRRM 20 V
Forward current (Average) IF(AV) 500 mA
Non-repetitive peak forward IFSM 3A
surge current *
Junction temperature Tj125 °C
Storage temperature Tstg 55 to +125 °CInternal Connection
Marking Symbol: M4E
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage VF1 IF = 10 mA 0.3 V
VF2 IF = 500 mA 0.5
Reverse current IRVR = 10 V 30 µA
Terminal capacitance CtVR = 0 V, f = 1 MHz 60 pF
Reverse recovery time *trr IF = IR = 100 mA 5 ns
Irr = 0.1 IR, RL = 100
Electrical Characteristics Ta = 25°C ± 3°C
12
3
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
R
s
= 50
Wave Form Analyzer
(SAS-8130)
R
i
= 50
t
p
= 2 µs
t
r
= 0.35 ns
δ = 0.05
I
F
= 100 mA
I
R
= 100 mA
R
L
= 100
10%
Input Pulse Output Pulse
I
rr
= 0.1 I
R
t
r
t
p
t
rr
V
R
I
F
t
t
A
Unit: mm
1: Anode
2: N.C.
3: Cathode
EIAJ: SC-59 Mini3-G1 Package
0.40+0.10
–0.05
(0.65) 1.50+0.25
–0.05
2.8+0.2
–0.3
2
1
3
(0.95) (0.95)
1.9±0.1
2.90+0.20
–0.05
0.16+0.10
–0.06
0.4±0.2
10˚
0 to 0.1 1.1+0.2
–0.1
1.1+0.3
–0.1
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3.Absolute frequency of input and output is 400 MHz.
4.*: trr measurement circuit
Note) *:The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
Note) The part number in the parenthesis shows conventional part number.
This product complies with the RoHS Directive (EU 2002/95/EC).