Schottky Barrier Diodes (SBD)
1
Publication date: April 2004 SKH00088CED
MA3X788 (MA788)
Silicon epitaxial planar type
For super high speed switching
For small current rectification
■Features
•Forward current (Average) IF(AV) = 200 mA rectification is
possible
•Reverse voltage VR = 60 V is guaranteed
■Absolute Maximum Ratings Ta = 25°C
Marking Symbol: M3V
Parameter Symbol Rating Unit
Reverse voltage VR60 V
Repetitive peak reverse voltage VRRM 60 V
Peak forward current IFM 300 mA
Forward current (Average) IF(AV) 200 mA
Non-repetitive peak forward IFSM 1A
surge current *
Junction temperature Tj125 °C
Storage temperature Tstg −55 to +125 °C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage VFIF = 200 mA 0.65 V
Reverse current IRVR = 50 V 50 µA
Terminal capacitance CtVR = 0 V, f = 1 MHz 30 pF
Reverse recovery time *trr IF = IR = 100 mA 3.0 ns
Irr = 0.1 IR, RL = 100 Ω
■Electrical Characteristics Ta = 25°C ± 3°C
Internal Connection
12
3
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
R
s
= 50 Ω
Wave Form Analyzer
(SAS-8130)
R
i
= 50 Ω
t
p
= 2 µs
t
r
= 0.35 ns
δ = 0.05
I
F
= 100 mA
I
R
= 100 mA
R
L
= 100 Ω
10%
Input Pulse Output Pulse
I
rr
= 0.1 I
R
t
r
t
p
t
rr
V
R
I
F
t
t
A
Unit: mm
1: Anode
2: N.C.
3: Cathode
EIAJ: SC-59 Mini3-G1 Package
0.40
+0.10
–0.05
(0.65) 1.50
+0.25
–0.05
2.8
+0.2
–0.3
2
1
3
(0.95) (0.95)
1.9
±0.1
2.90
+0.20
–0.05
0.16
+0.10
–0.06
0.4
±0.2
5˚
10˚
0 to 0.1 1.1
+0.2
–0.1
1.1
+0.3
–0.1
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3.Absolute frequency of input and output is 1 GHz.
4.*: trr measurement circuit
Note) *:The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
Note) The part number in the parenthesis shows conventional part number.
This product complies with the RoHS Directive (EU 2002/95/EC).