Schottky Barrier Diodes (SBD)

1
Publication date: April 2004 SKH00091CED
MA3XD11

Silicon epitaxial planar type

For high frequency rectification
■Features
•Forward current (Average) IF(AV) = 1 A rectification is possible
•Low forward voltage VF
■Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage VR20 V
Repetitive peak reverse voltage VRRM 25 V
Forward current (Average) *1IF(AV) 1.0 A
Non-repetitive peak forward IFSM 3A
surge current *2
Junction temperature Tj125 °C
Storage temperature Tstg −55 to +125 °C
12
3
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage VFIF = 1.0 A 0.45 V
Reverse current IRVR = 20 V 200 µA
Terminal capacitance CtVR = 0 V, f = 1 MHz 180 pF
■Electrical Characteristics Ta = 25°C ± 3°C
Internal Connection
Marking Symbol: M6K
Unit: mm
1: Anode
2: N.C.
3: Cathode
EIAJ: SC-59 Mini3-G1 Package
0.40+0.10
–0.05
(0.65) 1.50+0.25
–0.05
2.8+0.2
–0.3
2
1
3
(0.95) (0.95)
1.9±0.1
2.90+0.20
–0.05
0.16+0.10
–0.06
0.4±0.2
5˚
10˚
0 to 0.1 1.1+0.2
–0.1
1.1+0.3
–0.1
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3.Absolute frequency of input and output is 400 MHz.
Note) *1:Mounted on an alumina PC board
*2:
The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
This product complies with the RoHS Directive (EU 2002/95/EC).