Schottky Barrier Diodes (SBD)

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Publication date: October 2007 SKH00214AED
This product complies with the RoHS Directive (EU 2002/95/EC).
MA3Z7920G

Silicon epitaxial planar type

For super high speed switching
For small current rectification
■Features
•High-density mounting is possible
•Forward current (Average) IF(AV) = 100 mA rectification is possible
•Optimum for high frequency rectification because of its short
reverse recovery time trr
•Low forward voltage VF and good rectification efficiency
■Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating UnitReverse voltage VR30 VRepetitive peak reverse voltage VRRM 30 VForward current (Average) IF(AV) 100 mAPeak forward current IFM 300 mANon-repetitive peak forward IFSM 1A
surge current *
Junction temperature Tj125 °CStorage temperature Tstg −55 to +125 °CParameter Symbol Conditions Min Typ Max UnitForward voltage VFIF = 100 mA 0.55 VReverse current IRVR = 30 V 15 µATerminal capacitance CtVR = 0 V, f = 1 MHz 20 pFReverse recovery time *trr IF = IR = 100 mA 2.0 nsIrr = 0.1 IR, RL = 100 Ω
■Electrical Characteristics Ta = 25°C ± 3°C
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
R
s
= 50 Ω
Wave Form Analyzer
(SAS-8130)
R
i
= 50 Ω
t
p
= 2 µs
t
r
= 0.35 ns
δ = 0.05
I
F
= 100 mA
I
R
= 100 mA
R
L
= 100 Ω
10%
Input Pulse Output Pulse
I
rr
= 0.1 I
R
t
r
t
p
t
rr
V
R
I
F
t
t
ANote) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human bodyand the leakage of current from the operating equipment.3.Absolute frequency of input and output is 250 MHz. 4.*: trr measurement circuitNote) *:The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
■Package
•Code
SMini3-F2
•Pin Name
1: Anode
2: N.C.
3: Cathode
■Marking Symbol: M3T
■Internal Connection
12
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