Switching Diodes

1
Publication date: July 2004 SKF00067AEDMA4S111

Silicon epitaxial planar type

For switching circuits
■Features
•Allowing high-density mounting
•Short reverse recovery time trr
•Small terminal capacitance Ct
■Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating UnitReverse voltage VR80 VMaximum peak reverse voltage VRM 80 VForward current Single IF100 mADouble 75Repetitive peak Single IFRM 225 mAforward current Double 170Junction temperature Tj150 °COperating ambient temperature Topr −30 to +85 °CStorage temperature Tstg −55 to +150 °CParameter Symbol Conditions Min Typ Max UnitForward voltage VFIF = 100 mA 0.95 1.2 VReverse voltage VRIR = 100 µA80VReverse current IRVR = 75 V 100 nATerminal capacitance CtVR = 0 V, f = 1 MHz 0.6 2 pFReverse recovery time *trr IF = 10 mA, VR = 6 V 3 n sIrr = 0.1 IR , RL = 100 Ω
■Electrical Characteristics Ta = 25°C ± 3°C
Bias Application Unit N-50BU
90%
Pulse Generator
(PG-10N)
R
s
= 50 Ω
Wave Form Analyzer
(SAS-8130)
R
i
= 50 Ω
t
p
= 2 µs
t
r
= 0.35 ns
δ = 0.05
I
F
= 10 mA
V
R
= 6 V
R
L
= 100 Ω
10%
Input Pulse Output Pulse
I
rr
= 0.1 I
R
t
r
t
p
t
rr
V
R
I
F
t
t
A
Internal Connection
4
1
3
2
1: Anode 12: Anode 23: Cathode 24: Cathode 1 SSMini4-F1 PackageUnit: mm
Marking Symbol: M1B
1.6
±0.05
5˚1.0
±0.05
1.15
±0.05
0.01
±0.01
1.6
±0.1
0.25
±0.05
0.55
±0.1
0.10
±0.03
125˚(0.225)(0.15)43Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring method for diodes.2. Absolute frequency of input and output is 100 MHz.3. *: trr measurement circuit
This product complies with the RoHS Directive (EU 2002/95/EC).