Schottky Barrier Diodes (SBD)

1
Publication date: April 2004 SKH00102CEDMA4SD01

Silicon epitaxial planar type

For high speed switching
■Features
•Two isolated elements are contained in one package, allowing
high-density mounting
•Two MA3S781 (MA781) is contained in one package (of a type
in the same direction)
■Absolute Maximum Ratings Ta = 25°C
Marking Symbol: M1N
■Electrical Characteristics Ta = 25°C ± 3°C
Internal Connection
Parameter Symbol Conditions Min Typ Max UnitForward voltage VF1 IF = 1 mA 0.35 VVF2 IF = 30 mA 0.9Reverse current IRVR = 30 V 0.5 µATerminal capacitance CtVR = 1 V, f = 1 MHz 1.5 pFReverse recovery time *trr IF = IR = 10 mA 1.0 nsIrr = 1 mA, RL = 100 ΩDetection efficiency ηVIN = 3 V(peak) , f = 30 MHz 65 %RL = 3.9 kΩ, CL = 10 pF
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
R
s
= 50 Ω
Wave Form Analyzer
(SAS-8130)
R
i
= 50 Ω
t
p
= 2 µs
t
r
= 0.35 ns
δ = 0.05
I
F
= 10 mA
I
R
= 10 mA
R
L
= 100 Ω
10%
Input Pulse Output Pulse
I
rr
= 1 mA
t
r
t
p
t
rr
V
R
I
F
t
t
A
12
3
4
1: Anode 12: Anode 23: Cathode 24: Cathode 1 SSMini4-F1 PackageUnit: mmParameter Symbol Rating UnitReverse voltage VR30 VMaximum peak reverse voltageVRM 30 VForward current Single IF30 mADouble 20Peak forward currentSingle IFM 150 mADouble 110Junction temperature Tj125 °CStorage temperature Tstg −55 to +125 °CNote) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human bodyand the leakage of current from the operating equipment.3.Absolute frequency of input and output is 2 GHz. 4. *: trr measurement circuitNote) The part number in the parenthesis shows conventional part number.1.6
±0.05
5˚1.0
±0.05
1.15
±0.05
0.01
±0.01
1.6
±0.1
0.25
±0.05
0.55
±0.1
0.10
±0.03
125˚(0.225)(0.15)43
This product complies with the RoHS Directive (EU 2002/95/EC).