
Schottky Barrier Diodes (SBD)
1
Publication date: April 2004 SKH00102CEDMA4SD01Silicon epitaxial planar type
For high speed switching
■Features
•Two isolated elements are contained in one package, allowing
high-density mounting
•Two MA3S781 (MA781) is contained in one package (of a type
in the same direction)
■Absolute Maximum Ratings Ta = 25°C
Marking Symbol: M1N
■Electrical Characteristics Ta = 25°C ± 3°C
Internal Connection
Parameter Symbol Conditions Min Typ Max UnitForward voltage VF1 IF = 1 mA 0.35 VVF2 IF = 30 mA 0.9Reverse current IRVR = 30 V 0.5 µATerminal capacitance CtVR = 1 V, f = 1 MHz 1.5 pFReverse recovery time *trr IF = IR = 10 mA 1.0 nsIrr = 1 mA, RL = 100 ΩDetection efficiency ηVIN = 3 V(peak) , f = 30 MHz 65 %RL = 3.9 kΩ, CL = 10 pFBias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
R
s
= 50 Ω
Wave Form Analyzer
(SAS-8130)
R
i
= 50 Ω
t
p
= 2 µs
t
r
= 0.35 ns
δ = 0.05
I
F
= 10 mA
I
R
= 10 mA
R
L
= 100 Ω
10%
Input Pulse Output Pulse
I
rr
= 1 mA
t
r
t
p
t
rr
V
R
I
F
t
t
A12
3
4
±0.05
5˚1.0±0.05
1.15±0.05
0.01±0.01
1.6±0.1
0.25±0.05
0.55±0.1
0.10±0.03
125˚(0.225)(0.15)43