Switching Diodes
1
Publication date: February 2005 SKF00045CED
MA4X160A (MA160A)
Silicon epitaxial planar type
For switching circuits
■Features
•Two isolated elements contained in one package, allowing high-
density mounting
•Centrosymmetrical wiring, allowing to free from the taping
direction
•Short reverse recovery time trr
•Small terminal capacitance Ct
■Absolute Maximum Ratings Ta = 25°C
Unit: mm
Parameter Symbol Rating Unit
Reverse voltage VR80 V
Repetitive peak reverse voltage VRRM 80 V
Forward current Single IF(AV) 100 mA
(Average) Series 75
Repetitive peak Single IFRM 225 mA
forward current Series 170
Non-repetitive peak
Single IFSM 500 mA
forward surge current
*Series 375
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Internal Connection
Note) *:t = 1 s
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage VFIF = 100 mA 0.95 1.20 V
Reverse voltage VRIR = 100 µA80V
Reverse current IRVR = 75 V 0.1 µA
Terminal capacitance CtVR = 0 V, f = 1 MHz 0.9 2.0 pF
Reverse recovery time *trr IF = 10 mA, VR = 6 V 3 ns
Irr = 0.1 IR, RL = 100 Ω
■Electrical Characteristics Ta = 25°C ± 3°C
4
1
3
2
Marking Symbol: M1E
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
Rs = 50 Ω
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
tp = 2 µs
tr = 0.35 ns
δ = 0.05
IF = 10 mA
VR = 6 V
RL = 100 Ω
10%
Input Pulse Output Pulse
Irr = 0.1 IR
trtp
trr
VR
IF
t
t
A
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2.Absolute frequency of input and output is 100 MHz.
3.*: trr measurement circuit
2.90
+0.20
–0.05
0.16
+0.10
–0.06
0.4
±0.2
5˚
10˚
0.60
+0.10
–0.05
0.40
+0.10
–0.05
1.1
+0.2
–0.1
1.1
+0.3
–0.1
1.50
+0.25
–0.05
2.8
+0.2
–0.3
1.9
±0.2
(0.65)
(0.2)
(0.95)(0.95)
0 to 0.1
34
21
0.5R
1: Cathode 1
2: Anode 2
3: Cathode 2
4: Anode 1
EIAJ: SC-61 Mini4-G1 Package
Note) The part number in the parenthesis shows conventional part number.
This product complies with the RoHS Directive (EU 2002/95/EC).