Switching Diodes
1
Publication date: March 2004 SKF00046BED
MA4X174 (MA174)
Silicon planar type
For small power rectification and surge absorption
■Features
•Two isolated elements contained in one package, allowing high-
density mounting
•High breakdown voltage: VR = 200 V
■Absolute Maximum Ratings Ta = 25°C
Unit: mm
Parameter Symbol Rating Unit
Reverse voltage VR200 V
Repetitive peak reverse voltage VRRM 250 V
Non-repetitive peak reverse VRSM 300 V
surge voltage
Output current Single IO100 mA
Double 75
Repetitive peak Single IFRM 225 mA
forward current Double 170
Non-repetitive peak Single IFSM 500 mA
forward surge current
*Double 375
Junction temperature Tj125 °C
Storage temperature Tstg −55 to +125 °C
Internal Connection
Note) *: t = 1 s
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage VFIF = 100 mA 1.3 V
Reverse current IRVR = 200 V 1 .0 µA
■Electrical Characteristics Ta = 25°C ± 3°C
4
1
3
2
Marking Symbol: M2O
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2.Absolute frequency of input and output is 3 MHz.
2.90
+0.20
–0.05
0.16
+0.10
–0.06
0.4
±0.2
5˚
10˚
0.60
+0.10
–0.05
0.40
+0.10
–0.05
1.1
+0.2
–0.1
1.1
+0.3
–0.1
1.50
+0.25
–0.05
2.8
+0.2
–0.3
1.9
±0.2
(0.65)
(0.2)
(0.95)(0.95)
0 to 0.1
34
21
0.5R
Note) The part number in the parenthesis shows conventional part number.
1: Cathode 1
2: Cathode 2
3: Anode 2
4: Anode 1
EIAJ: SC-61 Mini4-G1 Package
This product complies with the RoHS Directive (EU 2002/95/EC).