Switching Diodes
1
Publication date: March 2004 SKF00047BED
Note) *:t = 1 s
MA4X193 (MA193)
Silicon epitaxial planar type
For switching circuit
■Features
•Four isolated elements contained in one package
•Short reverse recovery time trr
•Bridge diodes for surface mounting
•Anode common + cathode common composite product
■Absolute Maximum Ratings Ta = 25°C
Unit: mm
Parameter Symbol Rating Unit
Reverse voltage VR80 V
Repetitive peak reverse voltage VRRM 80 V
Forward current (Average) IF(AV) 70 mA
Repetitive peak forward current IFRM 150 mA
Non-repetitive peak forward IFSM 250 mA
surge current *
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage VFIF = 70 mA 1.2 V
Reverse voltage VRIR = 100 µA80V
Reverse current IRVR = 75 V 100 nA
Terminal capacitance CtVR = 0 V, f = 1 MHz 15 pF
Reverse recovery time *trr IF = 10 mA, VR = 6 V 10 ns
Irr = 0.1 IR , RL = 100 Ω
■Electrical Characteristics Ta = 25°C ± 3°C
Marking Symbol: M2Z
4
12
3
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
Rs = 50 Ω
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
tp = 2 µs
tr = 0.35 ns
δ = 0.05
IF = 10 mA
VR = 6 V
RL = 100 Ω
10%
Input Pulse Output Pulse
Irr = 0.1 IR
trtp
trr
VR
IF
t
t
A
Internal Connection
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2.Absolute frequency of input and output is 100 MHz.
3.*: trr measurement circuit
Note) The part number in the parenthesis shows conventional part number.
1:Cathode 1
Anode 2
2:Cathode 2, 3
3:Anode 3
Cathode 4
4:Anode 1, 4
EIAJ: SC-61 Mini4-G1 Package
2.90
+0.20
–0.05
0.16
+0.10
–0.06
0.4
±0.2
5˚
10˚
0.60
+0.10
–0.05
0.40
+0.10
–0.05
1.1
+0.2
–0.1
1.1
+0.3
–0.1
1.50
+0.25
–0.05
2.8
+0.2
–0.3
1.9
±0.2
(0.65)
(0.2)
(0.95)(0.95)
0 to 0.1
34
21
0.5R
This product complies with the RoHS Directive (EU 2002/95/EC).