Schottky Barrier Diodes (SBD)
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Publication date: February 2008 SKH00111CED
This product complies with the RoHS Directive (EU 2002/95/EC).
MA4ZD14Silicon epitaxial planar type
For high speed switching
■Features
•Two isolated elements are contained in one package, allowing
high-density mounting
•Low forward voltage: VF < 0.40 V
■Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage VR20 V
Repetitive peak reverse-voltage VRRM 20 V
Forward current Single IF100 mA
Double *175
Peak forward Single IFM 300 mA
current Double *1225
Non-repetitive peak
Single IFSM 1A
forward surge current
*2
Double *10.75
Junction temperature Tj125 °C
Storage temperature Tstg −55 to +125 °C
Parameter Symbol Conditions Min Typ Max Unit
Reverse current IRVR = 10 V 20 µA
Forward voltage VF1 IF = 5 mA 0.27 V
VF2 IF = 100 mA 0.40
Terminal capacitance CtVR = 0 V, f = 1 MHz 25 pF
Reverse recovery time *trr IF = IR = 100 mA 3 ns
Irr = 10 mA, RL = 100 Ω
■Electrical Characteristics Ta = 25°C ± 3°C
Bias Insertion Unit N-50BU
90%
Pulse Generator
(PG-10N)
Rs = 50 Ω
W.F. Analyzer
(SAS-8130)
Ri = 50 Ω
tp = 2 µs
tr = 0.35 ns
δ = 0.05
IF = 100 mA
IR = 100 mA
RL = 100 Ω
10%
Input Pulse Output Pulse
Irr = 10 mA
trtp
trr
VR
IF
t
t
A
Note) *1:Value of each diode in double diodes used.
*2:
The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3.Absolute frequency of input and output is 250 MHz. 4.*: trr measurement circuit
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