Switching Diodes
1
Publication date: November 2003 SKF00061BED
MA5J002E
Silicon epitaxial planar type
For high speed switching circuits
■Features
•Includes 4 elements of cathode common connection
•Parts reduction is possible
•Ideal for surge voltage absorption
■Absolute Maximum Ratings Ta = 25°C
Unit: mm
Parameter Symbol Rating Unit
Reverse voltage VR80 V
Maximum peak reverse voltage VRM 80 V
Forward current *1IF100 mA
Peak forward current *1IFM 225 mA
Non-repetitive peak forward IFSM 500 mA
surge current *1, 2
Junction temperature Tj150 °C
Operating ambient temperature Topr −25 to +105 °C
Storage temperature Tstg −55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage VFIF = 100 mA 1.2 V
Reverse voltage VRIR = 100 µA80V
Reverse current IRVR = 75 V 100 nA
Terminal capacitance CtVR = 0 V, f = 1 MHz 2 pF
Reverse recovery time *trr IF = 10 mA, VR = 6 V 3 ns
Irr = 0.1 IR , RL = 100 Ω
■Electrical Characteristics Ta = 25°C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring method for diodes.
2.Absolute frequency of input and output is 100 MHz.
3.*: trr measurement circuit
Marking Symbol: M5B
Note) *1:Value in single diode used.
*2:t = 1 s
1: Anode 1 3: Anode 2
2: Cathode 1, 2, 3, 4 4: Anode 3
5: Anode 4
SMini5-F 1 Package
Internal Connection
Bias Application Unit N-50BU
90%
Pulse Generator
(PG-10N)
Rs = 50 Ω
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
tp = 2 µs
tr = 0.35 ns
δ = 0.05
IF = 10 mA
VR = 6 V
RL = 100 Ω
10%
Input Pulse Output Pulse
Irr = 0.1 IR
trtp
trr
VR
IF
t
t
A
1
4
2 3
5
(0.65)(0.65)
2.0
±0.1
0.7
±0.1
1.25
±0.1
2.1
±0.1
0.16
+0.1
–0.06
123
54
0.2
±0.05
(0.425)
5˚
(0.15)
5˚
0 to 0.1
This product complies with the RoHS Directive (EU 2002/95/EC).