Schottky Barrier Diodes (SBD)

Publication date: August 2008 SKH00227BED 1
This product complies with the RoHS Directive (EU 2002/95/EC).
MA6J786Y

Silicon epitaxial planar type

For high speed switching circuits
Overview
MA6J786Y is optimal for general circuit supplies.
The assembly of 3 MA3X786 elements in parallel in one package.
Features
Forward current (Average) IF(AV) = 100 mA rectification is possible
Short reverse recovery time trr , optimum for high-frequency rectification
Low forward voltage VF and good rectification efficiency
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage VR30 V
Maximum peak reverse voltage VRM 30 V
Forward current (Average) IF(AV) 100 mA
Peak forward current IFM 300 mA
Non-repetitive peak forward surge
current *IFSM 1 A
Junction temperature Tj125 °C
Storage temperature Tstg -55 to +125 °C
Note) *: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Electrical Characteristics Ta = 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage VF1 IF = 100 mA 0.55 V
Reverse current IRVR = 30 V 15 mA
Terminal capacitance CtVR = 0, f = 1 MHz 20 pF
Reverse recovery time *1trr
IF = IR = 100 mA, Irr = 0.1 × IR ,
RL = 100 W1.0 ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current
from the operating equipment.
3. *1: trr measurement circuit
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
Rs = 50 Ω
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
tp = 2 µs
tr = 0.35 ns
δ = 0.05
IF = IR = 100 mA
RL = 100 Ω
10%
Input Pulse Output Pulse
Irr = 10 mA
trtp
trr
VR
IF
t
t
A
Package
Code
SMini6-F1
Pin Name
1: Cathode 1 4: Anode 3
2: Cathode 2 5: Anode 2
3: Cathode 3 6: Anode 1
Marking Symbol: M8C
Internal Connection
3
(C3)
(A3)
4
1
(C1) 2
(C2)
(A1)
6(A2)
5