1
Publication date: March 2004 SKF00054BED
Switching Diodes
MA6X124 (MA124)
Silicon epitaxial planar type
For switching circuit
■Features
•Four isolated elements contained in one package, allowing high-
density mounting
•Centrosymmetrical wiring, allowing to free from the taping direction
•Short reverse recovery time trr
•Small terminal capacitance Ct
■Absolute Maximum Ratings Ta = 25°C
Unit : mm
Parameter Symbol Rating UnitReverse voltage VR80 VMaximum peak reverse voltage VRM 80 VForward current *1IF100 mAPeak forward current *1IFM 225 mANon-repetitive peak forward IFSM 500 mAsurge current *1, 2
Junction temperature Tj150 °CStorage temperature Tstg −55 to +150 °CParameter Symbol Conditions Min Typ Max UnitForward voltage VFIF = 100 mA 1.2 VReverse voltage VRIR = 100 µA80VReverse current IRVR = 75 V 100 nATerminal capacitance CtVR = 0 V, f = 1 MHz 2 pFReverse recovery time *trr IF = 10 mA, VR = 6 V 3 nsIrr = 0.1 IR , RL = 100 Ω■Electrical Characteristics Ta = 25°C ± 3°C
1: Anode 1 4: Anode 3
2: Cathode 1, 2, 3, 4 5: Cathode 1, 2, 3, 4
3: Anode 2 6: Anode 4
EIAJ: SC-74 Mini6-G2 Package
654
123
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
Rs = 50 Ω
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
tp = 2 µs
tr = 0.35 ns
δ = 0.05
IF = 10 mA
VR = 6 V
RL = 100 Ω
10%
Input Pulse Output Pulse
Irr = 0.1 IR
trtp
trr
VR
IF
t
t
A2.90
1.9±0.1 0.16+0.10
–0.06
2.8+0.2
–0.3
1.1+0.3
–0.1
1.1
0 to 0.1 +0.2
–0.1 1.50
(0.65)
0.4±0.2
+0.25
–0.05
(0.95) (0.95)
0.30+0.10
–0.05
654
132
+0.20
–0.05
5˚
10˚
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.2.Absolute frequency of input and output is 100 MHz.3.*: trr measurement circuitNote) *1:Value for single diode*2:t = 1 s