Switching Diodes
1
Publication date: March 2004 SKF00055BED
Note) *:Value for single diode
MA6X125 (MA125)
Silicon epitaxial planar type
For switching circuit
■Features
•Four isolated elements contained in one package, allowing high-
density mounting
■Absolute Maximum Ratings Ta = 25°C
Unit: mm
Parameter Symbol Rating Unit
Reverse voltage VR40 V
Maximum peak reverse voltage VRM 40 V
Forward current *IF100 mA
Peak forward current *IFM 200 mA
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage VFIF = 100 mA 1.2 V
Reverse voltage VRIR = 100 µA40V
Reverse current IRVR = 40 V 100 nA
Terminal capacitance CtVR = 0 V, f = 1 MHz 5.0 pF
Reverse recovery time *3trr1 *1IF = 10 mA, VR = 6 V 150 ns
trr2 *2Irr = 0.1 IR , RL = 100 Ω9
■Electrical Characteristics Ta = 25°C ± 3°C
Marking Symbol: M2I
654
123
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
Rs = 50 Ω
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
tp = 2 µs
tr = 0.35 ns
δ = 0.05
IF = 10 mA
VR = 6 V
RL = 100 Ω
10%
Input Pulse Output Pulse
Irr = 0.1 IR
trtp
trr
VR
IF
t
t
A
Internal Connection
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2.Absolute frequency of input and output is 100 MHz.
3.*1: Between pins 1 and 6, Between pins 3 and 5
*2: Between pins 2 and 6, Between pins 3 and 4
*3: trr measurement circuit
Note) The part number in the parenthesis shows conventional part number.
1:Cathode 1
2:Anode 2
3:Cathode 3
Anode 4
4:Anode 3
5:Cathode 4
6:Anode 1
Cathode 2
EIAJ: SC-74 Mini6-G1 Package
2.90
1.9±0.1 0.16+0.10
–0.06
2.8+0.2
–0.3
1.1+0.3
–0.1
1.1
0 to 0.1 +0.2
–0.1 1.50
(0.65)
0.4±0.2
+0.25
–0.05
(0.95)
0.30+0.10
–0.05
0.50+0.10
–0.05
(0.95)
654
132
+0.20
–0.05
5˚
10˚
This product complies with the RoHS Directive (EU 2002/95/EC).