Switching Diodes
1
Publication date: March 2004 SKF00056BED
MA6X126 (MA126)
Silicon epitaxial planar type
For switching circuit
■Features
•Four isolated elements contained in one package, allowing high-
density mounting
•High breakdown voltage: VR = 80 V
■Absolute Maximum Ratings Ta = 25°C
Unit: mm
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage VFIF = 100 mA 1.2 V
Reverse voltage VRIR = 100 µA80V
Reverse current IRVR = 75 V 100 nA
Terminal capacitance Ct1 *1VR = 0 V, f = 1 MHz 15 pF
Ct2 *22
Reverse recovery time *3trr1 *1IF = 10 mA, VR = 6 V 10 ns
trr2 *2Irr = 0.1 IR , RL = 100 Ω3
■Electrical Characteristics Ta = 25°C ± 3°C
Marking Symbol: M2S
654
123
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
Rs = 50 Ω
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
tp = 2 µs
tr = 0.35 ns
δ = 0.05
IF = 10 mA
VR = 6 V
RL = 100 Ω
10%
Input Pulse Output Pulse
Irr = 0.1 IR
trtp
trr
VR
IF
t
t
A
Internal Connection
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2.Absolute frequency of input and output is 100 MHz.
3.*1: Between pins 1 and 5, Between pins 1 and 6
*2: Between pins 4 and 2, Between pins 4 and 3
*3: trr measurement circuit
Note) The part number in the parenthesis shows conventional part number.
1: Anode 3, 4
2: Anode 1
3: Anode 2
4: Cathode 1, 2
5: Cathode 3
6: Cathode 4
EIAJ: SC-74 Mini6-G1 Package
2.90
1.9±0.1 0.16+0.10
–0.06
2.8+0.2
–0.3
1.1+0.3
–0.1
1.1
0 to 0.1 +0.2
–0.1 1.50
(0.65)
0.4±0.2
+0.25
–0.05
(0.95)
0.30+0.10
–0.05
0.50+0.10
–0.05
(0.95)
654
132
+0.20
–0.05
5˚
10˚
Note) *1:Value for single diode
*2:t = 1 s
Parameter Symbol Rating Unit
Reverse voltage VR80 V
Maximum peak reverse voltage VRM 80 V
Forward current *1IF100 mA
Peak forward current *1IFM 225 mA
Non-repetitive peak forward IFSM 500 mA
surge current
*1, 2
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
This product complies with the RoHS Directive (EU 2002/95/EC).