Rectifier Diodes
1
Publication date: March 2004 SKC00003BED
MA6X129 (MA129)
Silicon epitaxial planar type
For small power current rectification
■Features
•Three isolated elements are contained in one package, allowing
high-density mounting
•Allowing high voltage rectification
■Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage VFIF = 200 mA 1.2 V
Reverse current IRVR = 200 V 200 nA
Terminal capacitance CtVR = 0 V, f = 1 MHz 4.5 pF
■Electrical Characteristics Ta = 25°C ± 3°C
Note) *: t = l s
Marking Symbol: M4F
Note) The part number in the parenthesis shows conventional part number.
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2.Absolute frequency of input and output is 3 MHz.
1 : Cathode 1 4 : Anode 3
2 : Cathode 2 5 : Anode 2
3 : Cathode 3 6 : Anode 1
EIAJ : SC-74 Mini6-G1 Package
Internal Connection
6
4
1
3
5 2
2.90
1.9
±0.1
0.16
+0.10
–0.06
2.8
+0.2
–0.3
1.1
+0.3
–0.1
1.1
0 to 0.1
+0.2
–0.1
1.50
(0.65)
0.4
±0.2
+0.25
–0.05
(0.95)
0.30
+0.10
–0.05
0.50
+0.10
–0.05
(0.95)
654
132
+0.20
–0.05
5˚
10˚
Parameter Symbol Rating Unit
Reverse voltage VR200 V
Maximum peak reverse voltage VRM 200 V
Output current Single IO200 mA
Triple 100
Repetitive peak forward Single IFRM 600 mA
current Triple 200
Non-repetitive peak Single IFSM 1
000 mA
forward surge current *Triple 350
Junction temperature Tj150 °C
Storage temperature Tstg −55 ∼ +150 °C