Schottky Barrier Diodes (SBD)
1
Publication date: April 2004 SKH00114BED
MA6Z718 (MA6S718)
Silicon epitaxial planar type
For switching
Features
Three isolated elements are contained in one package, allowing
high-density mounting
Forward voltage VF , optimum for low voltage rectification
Optimum for high frequency rectification because of its short
reverse recovery time trr
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage VR30 V
Maximum peak reverse voltage
VRM 30 V
Peak forward current *IFM 150 mA
Forward current *IF30 mA
Junction temperature Tj125 °C
Storage temperature Tstg 55 to +125 °C
Internal Connection
Marking Symbol: M2N
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage VF1 IF = 1 mA 0.4 V
VF2 IF = 30 mA 1.0
Reverse current IRVR = 30 V 1 µA
Terminal capacitance CtVR = 1 V, f = 1 MHz 1.5 pF
Reverse recovery time *trr IF = IR = 10 mA 1.0 ns
Irr = 1 mA, RL = 100
Detection efficiency ηVIN = 3 V(peak) , f = 30 MHz 65 %
RL = 3.9 k, CL = 10 pF
Electrical Characteristics Ta = 25°C ± 3°C
123
654
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
R
s
= 50
Wave Form Analyzer
(SAS-8130)
R
i
= 50
t
p
= 2 µs
t
r
= 0.35 ns
δ = 0.05
I
F
= 10 mA
I
R
= 10 mA
R
L
= 100
10%
Input Pulse Output Pulse
I
rr
= 1 mA
t
r
t
p
t
rr
V
R
I
F
t
t
A
Unit: mm
1: Anode 1 4: Cathode 3
2: Anode 2 5: Cathode 2
3: Anode 3 6: Cathode 1
EIAJ: SC-88 SMini6-F1 Package
(0.65)(0.65)
2.0
±0.1
0.7
±0.1
1.25
±0.1
2.1
±0.1
0.16
+0.10
–0.06
123
654
0.2
±0.05
(0.425)
(0.15)
0 to 0.1
Note) *:Value for single diode
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3.Absolute frequency of input and output is 2 GHz. 4. *: trr measurement circuit
Note) The part number in the parenthesis shows conventional part number.
This product complies with the RoHS Directive (EU 2002/95/EC).