Zener Diodes

Publication date: January 2009 SKE00050BED 1
This product complies with the RoHS Directive (EU 2002/95/EC).
MALD068XG

Silicon planar type

For ESD protection
Overview
MALD068XG is optimal for cell phones and AV application, all types of
I/O circuits.
It is possible to protect against forward and r everse surges.
Features
High resistance to surge voltages: 20 kV guaranteed
Low ter minal capacit ance Ct for low loss, low distor tion, and good
retention of signal waveforms.
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Peak pulse current *1IPP 3 A
Peak pulse power *1PPP 33 W
Total power dissipation *2PT150 mW
Junction temperature *3Tj150 °C
Storage temperature Tstg –55 to +150 °C
Electrostatic discharge ESD ±20 kV
Note) *1: Test method: IEC61000-4-5 (tp = 8/20 µs, Unrepeated)
*2: Test method: IEC61000-4-2 (C = 150 pF, R = 330 Ω, Contact discharge: 10 times)
*3: PT = 150 mW achieved with a printed circuit board.
Electrical Characteristics Ta = 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Breakdown voltage *1VBR IZ = 5 mA 5.8 7.2 8.8 V
Clamping voltage *2VCIPP = 3.0 A, tp = 8/20 µs 11.0 Ω
Reverse current IRVR = 3.5 V 500 nA
Terminal capacitan ce CtVR = 0 V, f = 1 MHz 25 pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. *1: VBR guaranted 20 ms after current flow.
*2: Pulse Waveform
3. Absolute frequency of input and output is 5 MHz
100
90
50
10
T2
Tt
T1
Percent of I
PP
Front time:
T1 = 1.25 × T = 8 µs ±20%
Time to half value:
T2 = 20 µs ±20%
Package
Code
SSSMini2-F3
Pin Name
1: Cathode
2: Cathode
Marking Symbol: A