Zener Diodes

Publication date: October 2008 SKE00047AED 1
This product complies with RoHS Directive (EU 2002/95/EC).
MALHxxxYG Series

Silicon planar type

For constant voltage, constant current, waveform clipper and surge absorption circuit
Features
Extremely low noise voltage caused from the diode
Extremely good rising performance (in the low-current range)
Independent wiring of two element
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Repetitive peak forward current IFRM 200 mA
Total power dissipation *PT150 mW
Junction temperature Tj150 °C
Storage temperature Tstg –55 to +150 °C
Note) *: PT = 150 mW achieved with a printed circuit board.
Common Electrical Characteristics Ta = 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage VFIF = 10 mA 0.9 1.0 V
Zener voltage *1VZIZ Specified value V
Zener rise operating resistance RZK IZ Specified value Refer to the list of the
electrical characteristics
within part numbers
W
Zener operating resistance RZIZ Specified value W
Reverse current IRVR Specified value mA
Temperature coefficient of zener voltage
*2SZIZ Specified value mV/°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 5 MHz.
3. The temperature must be controlled 25°C for VZ mesurement.
VZ value measured at other temperature must be adjusted to VZ (25°C)
4. *1
: VZ guaranted 20 ms after current flow.
*2 : Tj = 25°C to 150°C
Package
Code
SMini4-F2
Pin Name
1: Anode 1 3: Cathode 2
2: Anode 2 4: Cathode 1
Marking symbol
Refer to the list of the electrical
characteristics within part numbers